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R6004JND3 Datasheet

Manufacturer: Inchange Semiconductor
R6004JND3 datasheet preview

R6004JND3 Details

Part number R6004JND3
Datasheet R6004JND3-INCHANGE.pdf
File Size 260.97 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6004JND3 page 2

R6004JND3 Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 60 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6004JND3 Key Features

  • Drain Current -ID=4A@ TC=25℃ -Drain Source Voltage

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