R6004JND3
Description
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Key Features
- Drain Current –ID=4A@ TC=25℃
- Drain Source Voltage
- Static Drain-Source On-Resistance
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- Part: R6004JND3
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 260.97 KB