Datasheet Details
| Part number | R6006JND3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 261.53 KB |
| Description | N-Channel MOSFET |
| Download | R6006JND3 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor R6006JND3.
| Part number | R6006JND3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 261.53 KB |
| Description | N-Channel MOSFET |
| Download | R6006JND3 Download (PDF) |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 86 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.45 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
R6006JND3 | Power MOSFET | ROHM |
| Part Number | Description |
|---|---|
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