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INCHANGE

R6020ENX Datasheet Preview

R6020ENX Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
R6020ENX
·FEATURES
· Drain-source on-resistance:
RDS(on) ≤ 0.196@10V
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
60
PD
Total Dissipation @TC=25
68
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
1.84
UNIT
V
V
A
A
W
UNIT
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

R6020ENX Datasheet Preview

R6020ENX Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
R6020ENX
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=9.5A
600
V
2
4
V
0.196 Ω
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
VDS=600V; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V;Tj=125
VSD
Diode forward on voltage
ISD =20A, VGS = 0 V
±100 nA
100
μA
1000
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number R6020ENX
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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R6020ENX Datasheet PDF





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