R6024KNJ
Overview
- Static drain-source on-resistance: RDS(on)≤0.165Ω
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | R6024KNJ |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 315.45 KB |