Datasheet4U Logo Datasheet4U.com

R6524ENJ - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 24A@ TC=25℃.
  • Drain Source Voltage- : VDSS=650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 185mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
R6524ENJ Power MOSFET ROHM
R6524ENX Power MOSFET ROHM
R6524ENZ Power MOSFET ROHM
R6524ENZ1 Power MOSFET ROHM
R6524ENZ4 Power MOSFET ROHM

Other Datasheets by Inchange Semiconductor

Part Number Description
R6524ENX N-Channel MOSFET
R6524ENZ N-Channel MOSFET
R6524ENZ1 N-Channel MOSFET
R6524KNJ N-Channel MOSFET
R6524KNX N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor R6524ENJ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 185mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 245 W TJ Max.