R6547ENZ1 - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

Drain Current.
ID= 47A@ TC=25℃.
Drain Source Voltage- : VDSS= 650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 80mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	R6547ENZ1
Manufacturer	INCHANGE
File Size	298.79 KB
Description	N-Channel MOSFET
Datasheet	R6547ENZ1 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor R6547ENZ1 FEATURES ·Drain Current –ID= 47A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 80mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 47 A IDM Drain Current-Single Pluse 141 A PD Total Dissipation @TC=25℃ 480 W TJ Max.

Published: Mar 15, 2021 |