Datasheet Details
| Part number | R6576ENZ1 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 299.25 KB |
| Description | N-Channel MOSFET |
| Download | R6576ENZ1 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor R6576ENZ1.
| Part number | R6576ENZ1 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 299.25 KB |
| Description | N-Channel MOSFET |
| Download | R6576ENZ1 Download (PDF) |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 76 A IDM Drain Current-Single Pluse 228 A PD Total Dissipation @TC=25℃ 735 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.17 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6576ENZ1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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R6576ENZ1 | Power MOSFET | ROHM |
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