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R6576ENZ1 Datasheet

Manufacturer: Inchange Semiconductor
R6576ENZ1 datasheet preview

R6576ENZ1 Details

Part number R6576ENZ1
Datasheet R6576ENZ1 Datasheet PDF (Download)
File Size 299.25 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6576ENZ1 page 2

R6576ENZ1 Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 76 A IDM Drain Current-Single Pluse 228 A PD Total Dissipation @TC=25℃ 735 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6576ENZ1 Key Features

  • Drain Current -ID= 76A@ TC=25℃ -Drain Source Voltage

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