R8010ANX Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

R8010ANX n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	R8010ANX
Manufacturer	Inchange Semiconductor
File Size	247.43 KB
Description	N-Channel MOSFET
Datasheet	R8010ANX Datasheet

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.13 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R8010ANX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc N-Channel MOSFET Transistor R8010ANX.

Key Features

Drain Current.
ID= 10A@ TC=25℃.
Drain Source Voltage- : VDSS=800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.56Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	R8010ANX	Power MOSFET	ROHM

More Datasheets from Inchange Semiconductor

Part Number	Description
R8002ANJ	N-Channel MOSFET
R8002ANX	N-Channel MOSFET
R8005ANJ	N-Channel MOSFET
R8005ANX	N-Channel MOSFET
R8008ANJ	N-Channel MOSFET
R8008ANX	N-Channel MOSFET