RB238NS100
FEATURES
- Plastic material used carriers Underwriter Laboratory
- Metal silicon junction, majority carrier conduction
- Low Power Loss,high Efficiency
- Guard ring for overvoltage protection
- High Surge Capability,High Current Capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For use in low voltage,high frequency inverters,free wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 100
A on rated load conditions
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth...
