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RD3G500GN

RD3G500GN is N-Channel MOSFET manufactured by Inchange Semiconductor.
RD3G500GN datasheet preview

RD3G500GN Datasheet

Part number RD3G500GN
Download RD3G500GN Datasheet (PDF)
File Size 260.30 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
RD3G500GN page 2

RD3G500GN Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 100 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

RD3G500GN Key Features

  • Drain Current -ID= 50A@ TC=25℃ -Drain Source Voltage

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