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RD3H045SP - P-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= -4.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -45V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 155mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc P-Channel MOSFET Transistor RD3H045SP FEATURES ·Drain Current –ID= -4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 155mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -4.5 A IDM Drain Current-Single Pluse -9 A PD Total Dissipation @TC=25℃ 15 W TJ Max.