Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

RD3H160SP Datasheet

Manufacturer: Inchange Semiconductor
RD3H160SP datasheet preview

RD3H160SP Details

Part number RD3H160SP
Datasheet RD3H160SP-INCHANGE.pdf
File Size 260.67 KB
Manufacturer Inchange Semiconductor
Description P-Channel MOSFET
RD3H160SP page 2

RD3H160SP Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -16 A IDM Drain Current-Single Pluse -32 A PD Total Dissipation @TC=25℃ 20 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

RD3H160SP Key Features

  • Drain Current -ID= -16A@ TC=25℃ -Drain Source Voltage

Similar Datasheets

Brand Logo Part Number Description Manufacturer
ROHM Logo RD3H160SP Power MOSFET ROHM

RD3H160SP Distributor

Inchange Semiconductor Datasheets

More from Inchange Semiconductor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts