RD3H160SP - P-Channel MOSFET

Description

purpose applications.

Features

Drain Current.
ID= -16A@ TC=25℃.
Drain Source Voltage- : VDSS= -45V(Min).
Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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RD3H160SP P-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – RD3H160SP

Datasheet Details

Part number	RD3H160SP
Manufacturer	Inchange Semiconductor
File Size	260.67 KB
Description	P-Channel MOSFET
Datasheet	RD3H160SP Datasheet
Additional preview pages of the RD3H160SP datasheet.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor RD3H160SP FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -16 A IDM Drain Current-Single Pluse -32 A PD Total Dissipation @TC=25℃ 20 W TJ Max.

Published: Mar 15, 2021 |