RD3L08CGN - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	RD3L08CGN
Manufacturer	INCHANGE
File Size	261.50 KB
Description	N-Channel MOSFET
Datasheet	RD3L08CGN Datasheet
Additional preview pages of the RD3L08CGN datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 96 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resis

Features

Drain Current.
ID= 80A@ TC=25℃.
Drain Source Voltage- : VDSS= 60V(Min).
Static Drain-Source On-Resistance : RDS(on) = 7.0mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

RD3L080SNFRA - Power MOSFET (ROHM)
RD3L08BGN - Power MOSFET (ROHM)
RD3L150SNFRA - Power MOSFET (ROHM)
RD3L220SN - Power MOSFET (ROHM)
RD3.0E - Zener diode (Excel Semiconductor)
RD3.0EB - ZENER DIODES (SEMTECH)
RD3.0ES - Zener diode (WEJ)
RD3.0F - ZENER DIODES (EIC)

Other Datasheets by INCHANGE

RD3L080SN - N-Channel MOSFET
RD3L050SN - N-Channel MOSFET
RD3L140SP - P-Channel MOSFET
RD3L150SN - N-Channel MOSFET
RD3G400GN - N-Channel MOSFET
RD3G500GN - N-Channel MOSFET

Published: Mar 15, 2021 |