Datasheet Details
| Part number | RD3P200SN |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.35 KB |
| Description | N-Channel MOSFET |
| Download | RD3P200SN Download (PDF) |
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| Part number | RD3P200SN |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.35 KB |
| Description | N-Channel MOSFET |
| Download | RD3P200SN Download (PDF) |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 20 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor RD3P200SN.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
RD3P200SN | Power MOSFET | ROHM |
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