RD3U060CN - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

Drain Current.
ID= 6A@ TC=25℃.
Drain Source Voltage- : VDSS= 250V(Min).
Static Drain-Source On-Resistance : RDS(on) = 530mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	RD3U060CN
Manufacturer	INCHANGE
File Size	260.51 KB
Description	N-Channel MOSFET
Datasheet	RD3U060CN Datasheet
Additional preview pages of the RD3U060CN datasheet.

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isc N-Channel MOSFET Transistor RD3U060CN FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 530mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 52 W TJ Max.

Published: Mar 15, 2021 |