Datasheet Details
| Part number | RD3U060CN |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.51 KB |
| Description | N-Channel MOSFET |
| Download | RD3U060CN Download (PDF) |
|
|
| Part number | RD3U060CN |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.51 KB |
| Description | N-Channel MOSFET |
| Download | RD3U060CN Download (PDF) |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 52 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.36 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor RD3U060CN.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
RD3U060CN | Power MOSFET | ROHM |
| Part Number | Description |
|---|---|
| RD3U040CN | N-Channel MOSFET |
| RD3U080CN | N-Channel MOSFET |
| RD3G400GN | N-Channel MOSFET |
| RD3G500GN | N-Channel MOSFET |
| RD3G600GN | N-Channel MOSFET |
| RD3H045SP | P-Channel MOSFET |
| RD3H080SP | P-Channel MOSFET |
| RD3H160SP | P-Channel MOSFET |
| RD3H200SN | N-Channel MOSFET |
| RD3L050SN | N-Channel MOSFET |