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RFG70N06 - N-Channel MOSFET

Features

  • With TO-247 packaging.
  • UIS rating curve.
  • Peak current vs pulse width curve.
  • High power and current handling capability.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·UIS rating curve ·Peak current vs pulse width curve ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current switching applications INCHANGE Semiconductor RFG70N06 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 70 IDM Drain Current-Single Pulsed 450 PD Total Dissipation 150 Tch Max.
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