Download RFNL5TJ6S Datasheet PDF
Inchange Semiconductor
RFNL5TJ6S
FEATURES - With TO-220 packaging - Ultra low forward voltage - Low switching loss - High surge current capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - Power switching circuits - General rectification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage tw=500ns;duty=1/40 IF(AV) Average Rectified Forward Current @Tc=100℃ Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 50 A rated load conditions;One shot Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor MAX 4.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃...