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RJ1G08CGN Datasheet

Manufacturer: Inchange Semiconductor
RJ1G08CGN datasheet preview

Datasheet Details

Part number RJ1G08CGN
Datasheet RJ1G08CGN-INCHANGE.pdf
File Size 250.09 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
RJ1G08CGN page 2

RJ1G08CGN Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 78 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

RJ1G08CGN Key Features

  • Drain Current -ID= 80A@ TC=25℃ -Drain Source Voltage

RJ1G08CGN from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ROHM Logo RJ1G08CGN Power MOSFET ROHM
Inchange Semiconductor logo - Manufacturer

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