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S2818A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor S2818A.

General Description

·High Voltage-VCBO= 1500V(Min.) ·Collector Current- IC = 7.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV Horizontal output appl ications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current 5 A ICM Collector Current-Peak 7.5 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Emitter Sustaining Voltage IC= 1mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;

IB= 2A VbE(sat) Baset-Emitter Saturation Voltage IC= 4.5A;

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