Datasheet Details
| Part number | S9012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.54 KB |
| Description | PNP Transistor |
| Download | S9012 Download (PDF) |
|
|
| Part number | S9012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.54 KB |
| Description | PNP Transistor |
| Download | S9012 Download (PDF) |
|
|
|
·Excellent hFE linearity ·Complement to NPN Type S9013 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range S9012 VALUE -40 -25 -5 -500 625 150 -55~150 UNIT V V V mA mW ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor S9012 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-base breakdown voltage IC= -100μA , IE=0 -40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
IB= 0 -25 V V(BR)EBO Emitter-base breakdown voltage IE= -100μA , IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
S9012 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
S9012 | PNP General Purpose Transistors | Weitron Technology |
 |
S9012 | PNP Silicon Transistor | BL |
 |
S9012 | PNP Silicon Transistor | SeCoS |
 |
S9012 | PNP Transistor | TGS |
| Part Number | Description |
|---|---|
| S9013 | NPN Transistor |