Download SBR30A45 Datasheet PDF
Inchange Semiconductor
SBR30A45
FEATURES - Dual Rectifier Conduction, Positive Center Tap - Low Power Loss/High Efficiency - High Current Capability, Low Forward Voltage Drop - High Surge Capacity - Guarding for Overvoltage protection - For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) IFSM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Per Leg) ( Total ) Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions IRRM Peak Repetitive Reverse Surge Current (2μS - 1Khz) VALUE 45 15 30 250 Junction Temperature -55~150 Tstg Storage Temperature Range -55~150 UNIT V A A A ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case UNIT ℃/W ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS...