SDT30B100D1
FEATURES
- Low Forward Voltage
- High Operating Junction Temperature
- Extremely low reverse leakage
- Optimized VF vs. IR trade off for high efficiency
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High frequency switching
- High efficiency SMPS
- Automotive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VR
Peak Repetitive Reverse Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 135℃
Non-repetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
A wave, single phase, 60Hz)
Junction Temperature
-55~175 ℃
Tstg
Storage Temperature Range
-55~175 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to...
