SDT7B04 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) DC Current Gain- : hFE= 20~250(Min.)@IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output,regulated power supply and power amplif

INCHANGE

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Datasheet Details

Part number	SDT7B04
Manufacturer	Inchange Semiconductor
File Size	178.73 KB
Description	NPN Transistor
Datasheet	SDT7B04 Datasheet
Additional preview pages of the SDT7B04 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor SDT7B04 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·DC Current Gain- : hFE= 20~250(Min.)@IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output,regulated power supply and power amplifier applications.

Published: Sep 9, 2020 |