isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.65mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 22.8A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 75V; VGS= 0
VSD
Forward On-Voltage
IS= 22.8A; VGS= 0
SKI07171
MIN MAX UNIT
75
V
1.0
2.5
V
14.1
mΩ
±100 nA
100
μA
1.5
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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