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SPA07N65C3 Datasheet Preview

SPA07N65C3 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
·FEATURES
·New revolutionary high voltage technology
·Ultra low gate charge
·High peak current capability
·Improved transconductance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
SPA07N65C3
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25
TC=100
Drain Current-Single Pulsed
±20
7.3
4.6
21.9
PD
Total Dissipation
32
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
3.9
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

SPA07N65C3 Datasheet Preview

SPA07N65C3 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SPA07N65C3
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
650
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.35mA
3
3.9
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=4.6A
540 600
mΩ
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 650V; VGS= 0VTJ=25
TJ=125
ISD=7.3A, VGS = 0 V
±0.1 μA
1
100
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number SPA07N65C3
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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