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SPA15N65C3 - N-Channel MOSFET

Key Features

  • With TO-220F package.
  • Low input capacitance and gate charge.
  • Reduced switching and conduction losses.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for SPA15N65C3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPA15N65C3. For precise diagrams, and layout, please refer to the original PDF.

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Mi...

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ge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor SPA15N65C3 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 15 9.4 45 PD Total Dissipation @TC=25℃ 34 Tj Max.

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