SPI08N80C3 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	SPI08N80C3
Manufacturer	INCHANGE
File Size	283.17 KB
Description	N-Channel MOSFET
Datasheet	SPI08N80C3-INCHANGE.pdf

SPI08N80C3 Product details

Description

High peak current capability Ultra low gate charge Ultra low effective capacitances ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 104 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Cha

Features

Static drain-source on-resistance: RDS(on) ≤0.65Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 3, 2020 |