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SPI15N65C3 Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

General Description

·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 45 A PD Total Dissipation @TC=25℃ 156 W Tj Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.8 ℃/W SPI15N65C3 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;

ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS;

Overview

isc N-Channel MOSFET Transistor ·.

Key Features

  • Static drain-source on-resistance: RDS(on) ≤0.38Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.