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SPI20N60C3 - N-Channel MOSFET

Features

  • With TO-262(I2PAK) package.
  • Low input capacitance and gate charge.
  • High peak current capability.
  • Improved transconductance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed PD Total Dissipation Tj Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance INCHANGE Semiconductor SPI20N60C3 VALUE 600 ±30 20.7 13.1 62.
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