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SPP04N60C3 Datasheet TO-251 N-Channel MOSFET

Manufacturer: Inchange Semiconductor

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General Description

·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 13.5 PD Total Dissipation @TC=25℃ 40 Tj Max.

Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.1 UNIT ℃/W SPP04N60C3 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;

ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS;

Overview

isc N-Channel MOSFET Transistor ·.

Key Features

  • Static drain-source on-resistance: RDS(on) ≤0.95Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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