SPP11N80C3 mosfet equivalent, n-channel mosfet.
*Ultra low effective capacitances
*Low gate charge
*Improved transconductance
*Low gate drive power loss
*100% avalanche tested
*Minimum Lot-to-Lo.
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage.
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