SPP20N60C3 Description
·Ultra low gate charge ·High peak current capability ·Improved transconductance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.7 IDM Drain Current-Single Pulsed 62.1 PD Total Dissipation @TC=25℃ 208 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1mA RDS(on) Drain-Source On-Resistance VGS=10V;.
SPP20N60C3 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Ultra low gate charge -High peak current capability -Improved transconductance