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SS8050 - Silicon NPN Power Transistor

Description

Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS

Designed for high-speed switching and Amplifier applications.

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Datasheet Details

Part number SS8050
Manufacturer Inchange Semiconductor
File Size 54.67 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet SS8050 Datasheet
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    INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 40 25 5 1.5 300 150 -55~150 UNIT V V V A mW ℃ ℃ isc website：www.iscsemi.
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