SS8050 transistor equivalent, silicon npn power transistor.
*Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*Low Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC =0.8A
APPLICATIONS
*Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitt.
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