Datasheet Details
| Part number | SSP80N06A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.96 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SSP80N06A Datasheet
|
|
|
| Part number | SSP80N06A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.96 KB |
| Description | N-Channel MOSFET |
| Datasheet |
SSP80N06A Datasheet
|
|
|
|
·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High efficiency DC/DC Converters ·Synchronous Rectification ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 80 A ID(puls) Pulse Drain Current 320 A Ptot Total Dissipation@TC=25℃ 140 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.07 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SSP80N06A SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=250µA 60 V VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor SSP80N06A ·.
| Part Number | Description |
|---|