Datasheet4U Logo Datasheet4U.com

STB12NM50-1 Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

📥 Download Datasheet

General Description

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±30 V 12 A 48 A 160 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.78 UNIT ℃/W STB12NM50-1 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STB12NM50-1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;

Overview

isc N-Channel MOSFET Transistor.

Key Features

  • Drain Current.
  • ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ST Microelectronics Logo STB12NM50-1 N-CHANNEL MOSFET ST Microelectronics

More Datasheets from Inchange Semiconductor

Part Number Description
STB12NM50-2 N-Channel MOSFET
STB12NM50ND N-Channel MOSFET
STB100N10F7 N-Channel MOSFET
STB100N6F7-2 N-Channel MOSFET
STB11N65M5 N-Channel MOSFET
STB11N65M5-2 N-Channel MOSFET
STB11NM60 N-Channel MOSFET
STB11NM60-1 N-Channel MOSFET
STB11NM60FD N-Channel MOSFET
STB11NM60N N-Channel MOSFET