Datasheet Details
| Part number | STB20N65M5 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 265.00 KB |
| Description | N-Channel MOSFET |
| Download | STB20N65M5 Download (PDF) |
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| Part number | STB20N65M5 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 265.00 KB |
| Description | N-Channel MOSFET |
| Download | STB20N65M5 Download (PDF) |
|
|
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·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 650 V ±25 V 18 A 72 A 130 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.96 UNIT ℃/W STB20N65M5 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STB20N65M5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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STB20N65M5 | N-channel Power MOSFET | STMicroelectronics |
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