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STB22NM60N - N-Channel MOSFET

Datasheet Summary

Features

  • Low input capacitance and gate charge.
  • Low gate input resistances.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STB22NM60N

Datasheet Details

Part number STB22NM60N
Manufacturer INCHANGE
File Size 229.57 KB
Description N-Channel MOSFET
Datasheet download datasheet STB22NM60N Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB22NM60N ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 16 10 A IDM Drain Current-Single Pulsed 64 A PD Total Dissipation 125 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.0 UNIT ℃/W isc website：www.iscsemi.
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