STP15NM65N Datasheet | Inchange Semiconductor

FEATURES - Typical RDS(on)=0.25Ω - Low input capacitance and gate charge - Low gate input resistances - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 15.5 10 Total Dissipation Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62.5 UNIT ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET...