STP20N65M5 Datasheet | Inchange Semiconductor

FEATURES - Typical RDS(on)=0.16Ω - Excellent switching performance - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 18 11.3 Total Dissipation Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.96 62.5 UNIT ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET...