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STP55NF06 Datasheet Preview

STP55NF06 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STP55NF06
DESCRIPTION
·With TO-220F packaging
·100% avalanche tested
·Fast switching speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor control
·Audio amplifiers
·DC-DC&DC-AC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25
50
ID
A
Drain Current-continuous@ TC=100
35
Ptot
Total Dissipation@TC=25
30
W
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature Range
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX
5
62.5
UNIT
/W
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

STP55NF06 Datasheet Preview

STP55NF06 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
STP55NF06
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250uA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 250uA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 27.5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VDS= 60V; VGS= 0,Tc=125
VSD
Diode Forward Voltage
ISD= 55A; VGS= 0
MIN MAX UNIT
60
V
2
4
V
0.018 Ω
±100 nA
1
uA
10
uA
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number STP55NF06
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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STP55NF06 Datasheet PDF





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