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STP55NF06 Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

General Description

·With TO-220F packaging ·100% avalanche tested ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Audio amplifiers ·DC-DC&DC-AC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 50 ID A Drain Current-continuous@ TC=100℃ 35 Ptot Total Dissipation@TC=25℃ 30 W Tj Max.

Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor STP55NF06 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

ID= 250uA VGS(TH) Gate Threshold Voltage VDS= VGS;

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP55NF06.