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STP60N06-14 - N-Channel MOSFET

Features

  • With low gate drive requirements.
  • Easy to drive.
  • High current capability.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STP60N06-14

Datasheet Details

Part number STP60N06-14
Manufacturer INCHANGE
File Size 223.73 KB
Description N-Channel MOSFET
Datasheet download datasheet STP60N06-14 Datasheet
Additional preview pages of the STP60N06-14 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP60N06-14 ·FEATURES ·With low gate drive requirements ·Easy to drive ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenold and relay dirvers ·DC-DC converters ·Automotive environment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 60 50 240 PD Total Dissipation 150 Tj Operating Junction Temperature -65~175 Tstg Storage Temperature -65~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-amb
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