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STP80NF55-06 - N-Channel MOSFET

Datasheet Summary

Features

  • Typical RDS(on)=0.005Ω.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STP80NF55-06

Datasheet Details

Part number STP80NF55-06
Manufacturer INCHANGE
File Size 201.91 KB
Description N-Channel MOSFET
Datasheet download datasheet STP80NF55-06 Datasheet
Additional preview pages of the STP80NF55-06 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP80NF55-06 ·FEATURES ·Typical RDS(on)=0.005Ω ·Excellent switching performance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenoid and relay drivers ·DC-DC converters ·Automotive environment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 80 57 320 PD Total Dissipation 210 Tj Max.
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