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STPS15H100CB - Schottky Barrier Rectifier

Features

  • Plastic material used carriers Underwriter Laboratory.
  • Metal silicon junction, majority carrier conduction.
  • Low Power Loss,high Efficiency.
  • Guard ring for overvoltage protection.
  • High Surge Capability,High Current Capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Schottky Rectifier INCHANGE Semiconductor STPS15H100CB FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Forward current VALUE UNIT 100 V 10 A IF(AV) Average Rectified Forward per diode Current Tc=135℃;δ=0.5 Total package 7.
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