STPS20100CT
FEATURES
- Plastic material used carriers Underwriter Laboratory
- Metal silicon junction, majority carrier conduction
- Low Power Loss,high Efficiency
- Guard ring for overvoltage protection
- High Surge Capability,High Current Capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For use in low voltage,high frequency inverters,free wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
IF(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Forward current
VALUE UNIT
IF(AV)
Average Rectified Forward Current Tc=110℃ VR=60V per diode per device
10 20
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed on rated load conditions
A tp=10 ms sinusoidal
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~175 ℃ dv/dt Voltage Rate of Change (Rated VR)
1000 V/μs isc...
