STPS30L120CFP
FEATURES
- High junction temperature capability
- Low Power Loss,high Efficiency
- Low forward voltage drop current
- High Surge Capability,High Current Capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Be suited for high frequency switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 220
A on rated load conditions
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~175 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case per diode total
ELECTRICAL CHARACTERISTICS (Pulse...
