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STW21NM60ND - N-Channel MOSFET

Features

  • With TO-247 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STW21NM60ND

Datasheet Details

Part number STW21NM60ND
Manufacturer INCHANGE
File Size 358.58 KB
Description N-Channel MOSFET
Datasheet download datasheet STW21NM60ND Datasheet
Additional preview pages of the STW21NM60ND datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW21NM60ND ·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 140 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.
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