Full PDF Text Transcription for STW77N65M5 (Reference)
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STW77N65M5. For precise diagrams, and layout, please refer to the original PDF.
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·Easy to use ·100% avalanche tested ·Mini...
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e ·Low gate input resistance ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor STW77N65M5 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 69 41.5 276 PD Total Dissipation @TC=25℃ 400 Tj Max.
STW77N65M5 Datasheet
