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Isc P-Channel MOSFET Transistor
INCHANGE Semiconductor
SUD50P04-08
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-40
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous Tc=25℃ Tc=70℃
Drain Current-Single Pulsed
±20
-50 -50
-100
PD
Total Dissipation @TC=25℃
73.5
Tj
Max.