Datasheet Details
| Part number | T2141F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.33 KB |
| Description | NPN Transistor |
| Download | T2141F Download (PDF) |
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| Part number | T2141F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.33 KB |
| Description | NPN Transistor |
| Download | T2141F Download (PDF) |
|
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|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 600(Min.)@ IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 1.8V(Max.)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching for dynamotor excitation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ T2141F isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| T2180N | Phase Control Thyristor |