T810-800B Overview
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base IT=11A Ⅰ VD =12V;RL=30Ω; Half cycle MIN MAX UNIT 5 1000 μA 1.55 V 10 10 mA 10 1.3 V 1.6 ℃/W isc website：.iscsemi. isc & iscsemi is registered trademark isc Thyristors T810-800B NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
